Low RDS(on) Drives Efficiency in a Compact DFN5x6 Package
Introducing MCC’s newest addition to our advanced P-channel MOSFET lineup — MCAC017P08Y. This 80V component is engineered with SGT technology to deliver maximum efficiency in the compact DFN5060 package.
Boasting an on-resistance of only 17mΩ, gate charge of 17nC, and low conduction losses, this MOSFET ensures the performance and reliability required for fast switching with minimal power consumption.
Perfect for high-switching applications, including motor drives, DC-DC converters, and power drive modules, MCAC017P08Y enables innovation in space-constrained environments while enhancing system performance.
Features & Benefits:
1.SGT Technology: Improves efficiency while reducing power loss
2.Low On-Resistance: An RDS(on) of 17mΩ reduces switching losses, boosting efficiency
3.Low Conduction Losses: Minimize heat generation for optimal performance
4.Low Gate Charge: A gate charge of 17nC promotes faster switching
5.Low Switching Losses: Enable rapid switching for high-frequency applications
6.High Power Density: DFN5x6 package saves space without lowering performance
7.Excellent Thermal Performance: Facilitates safe operation by preventing overheating
